AUIRFR4105ZTRL

Infineon Technologies

MOSFET N-CH 55V 20A DPAK

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Infineon Technologies

MOSFET N-CH 55V 20A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFR4105ZTRL

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	48 W
Rds On (Max) @ Id, Vgs	24.5 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Infineon Technologies AUIRFR4105ZTRL	20 V	27 nC	-55 °C	175 ░C	20 A	4 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	55 V	N-Channel	10 V	48 W	24.5 mOhm	TO-252AA (DPAK)	740 pF	Surface Mount

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General part information

N-Channel 55 V 20A (Tc) 48W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources