Specification	MBR20080CTR

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage	5 mA
Diode Configuration	Common Anode
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Package Name	Twin Tower
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	80 V
Voltage - Forward (Vf) (Max)	840 mV

MBR20080 Series

Part	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package Name	Package / Case	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)	Diode Pair Count	Diode Configuration	Voltage - Forward (Vf) (Max)	Mounting Type	Current - Average Rectified (Io) (per Diode)	Technology
GeneSiC Semiconductor MBR20080CT	500 ns	200 mA	Twin Tower	Twin Tower	5 mA	80 V	1 pair	Common Cathode	840 mV	Chassis Mount	200 A	Schottky
GeneSiC Semiconductor MBR20080CTR	500 ns	200 mA	Twin Tower	Twin Tower	5 mA	80 V	1 pair	Common Anode	840 mV	Chassis Mount	200 A	Schottky
GeneSiC Semiconductor MBR20080CT	500 ns	200 mA	Twin Tower	Twin Tower	5 mA	80 V	1 pair	Common Cathode	840 mV	Chassis Mount	200 A	Schottky
GeneSiC Semiconductor MBR20080CTR	500 ns	200 mA	Twin Tower	Twin Tower	5 mA	80 V	1 pair	Common Anode	840 mV	Chassis Mount	200 A	Schottky

Pricing

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