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TS27M4IDT

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STMicroelectronics

MICROPOWER, HIGH VOLTAGE CMOS OP-AMP

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DocumentsDT0073+7

TS27M4IDT

Active
STMicroelectronics

MICROPOWER, HIGH VOLTAGE CMOS OP-AMP

Deep-Dive with AI

DocumentsDT0073+7

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTS27M4IDTTS27M4 Series
Amplifier Type-CMOS
Current - Input Bias-1 pA
Current - Output / Channel-45 mA
Current - Supply-150 µA
Gain Bandwidth Product-1 MHz
Mounting Type-Through Hole, Surface Mount
null-
Number of Circuits-4
Operating Temperature-70 - 125 °C
Operating Temperature--40 - 0 °C
Package / Case-14-DIP, 14-SOIC
Package / Case-3.9 - 7.62 mm
Package / Case-0.154 - 0.3 "
Slew Rate-0.6 V/µs
Supplier Device Package-14-DIP, 14-SO
Voltage - Input Offset-1.1 - 900 mV
Voltage - Supply Span (Max)-16 V
Voltage - Supply Span (Min)-3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

TS27M4 Series

IC CMOS 4 CIRCUIT 14DIP

PartVoltage - Supply Span (Min) [Min]Current - Input BiasSupplier Device PackageMounting TypeVoltage - Supply Span (Max) [Max]Current - SupplyCurrent - Output / ChannelPackage / CasePackage / Case [y]Package / Case [x]Number of CircuitsAmplifier TypeVoltage - Input OffsetOperating Temperature [Max]Operating Temperature [Min]Slew RateGain Bandwidth Product
STMicroelectronics
TS27M4IN
3 V
1 pA
14-DIP
Through Hole
16 V
150 µA
45 mA
14-DIP
7.62 mm
0.3 "
4
CMOS
1.1 mV
125 °C
-40 °C
0.6 V/µs
1 MHz
STMicroelectronics
TS27M4CD
3 V
1 pA
14-SO
Surface Mount
16 V
150 µA
45 mA
14-SOIC
3.9 mm
0.154 in
4
CMOS
1.1 mV
70 °C
0 °C
0.6 V/µs
1 MHz
STMicroelectronics
TS27M4AIDT
3 V
1 pA
14-SO
Surface Mount
16 V
150 µA
45 mA
14-SOIC
3.9 mm
0.154 in
4
CMOS
900 µV
125 °C
-40 °C
0.6 V/µs
1 MHz
STMicroelectronics
TS27M4CDT
STMicroelectronics
TS27M4CPT
STMicroelectronics
TS27M4ACD
3 V
1 pA
14-SO
Surface Mount
16 V
150 µA
45 mA
14-SOIC
3.9 mm
0.154 in
4
CMOS
900 µV
70 °C
0 °C
0.6 V/µs
1 MHz
STMicroelectronics
TS27M4IDT
STMicroelectronics
TS27M4CN
3 V
1 pA
14-DIP
Through Hole
16 V
150 µA
45 mA
14-DIP
7.62 mm
0.3 "
4
CMOS
1.1 mV
70 °C
0 °C
0.6 V/µs
1 MHz
STMicroelectronics
TS27M4ID
3 V
1 pA
14-SO
Surface Mount
16 V
150 µA
45 mA
14-SOIC
3.9 mm
0.154 in
4
CMOS
1.1 mV
125 °C
-40 °C
0.6 V/µs
1 MHz

Description

General part information

TS27M4 Series

These devices are low cost, low power quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an excellent consumption-speed ratio. These series are ideally suited for low consumption applications.

Three power consumptions are available allowing to have always the best consumption-speed ratio:ICC= 10µA/amp.: TS27L4 (very low power)ICC= 150µA/amp.: TS27M4 (low power)ICC= 1mA/amp.: TS274 (standard)

These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 2).