AOT2618L

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 7A/23A TO220

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 7A/23A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT2618L

Current - Continuous Drain (Id) @ 25°C	23 A, 7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2.1 W, 41.5 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AOT2618L	950 pF	20 nC	7 A 23 A	Through Hole	MOSFET (Metal Oxide)	N-Channel	2.5 V	TO-220	TO-220-3	2.1 W 41.5 W	20 V	-55 °C	175 ░C	4.5 V 10 V	19 mOhm	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly