BYT01-400

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STMicroelectronics

DIODE GEN PURP 400V 1A DO15

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STMicroelectronics

DIODE GEN PURP 400V 1A DO15

Technical Specifications

Parameters and characteristics for this part

Specification	BYT01-400

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	55 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

DIODE GEN PURP 400V 1A DO15

Part	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Speed	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
STMicroelectronics BYT01-400	20 µA	DO-15	55 ns	400 V	Standard	1 A	200 mA, 500 ns	Axial, DO-15, DO-204AC	Through Hole	150 °C	-40 °C

General part information

Diode 400 V 1A Through Hole DO-15

Technical documentation and resources