DG2517DN-T1-E4

Obsolete

Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 4OHM 10DFN

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Obsolete

Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 4OHM 10DFN

Technical Specifications

Parameters and characteristics for this part

Specification	DG2517DN-T1-E4

-3db Bandwidth	242 MHz
Channel Capacitance (CS(off), CD(off)) [custom]	8 pF
Channel Capacitance (CS(off), CD(off)) [custom]	8 pF
Channel-to-Channel Matching (ΔRon)	100 mOhm
Charge Injection	2 pC
Crosstalk	-73 dB
Current - Leakage (IS(off)) (Max)	1 nA
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	2
On-State Resistance (Max) [Max]	4 Ohm
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	10-VFDFN Exposed Pad
Supplier Device Package	10-DFN (3x3)
Switch Circuit	SPDT
Switch Time (Ton, Toff) (Max) [custom]	20 ns
Switch Time (Ton, Toff) (Max) [custom]	25 ns
Voltage - Supply, Single (V+) [Max]	5.5 V
Voltage - Supply, Single (V+) [Min]	1.8 V

Part	Supplier Device Package	Channel-to-Channel Matching (ΔRon)	Number of Circuits	On-State Resistance (Max) [Max]	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	Current - Leakage (IS(off)) (Max)	Voltage - Supply, Single (V+) [Min]	Voltage - Supply, Single (V+) [Max]	Crosstalk	Charge Injection	Package / Case	Package / Case [x]	Package / Case [x]	Channel Capacitance (CS(off), CD(off)) [custom]	Channel Capacitance (CS(off), CD(off)) [custom]	Mounting Type	-3db Bandwidth	Switch Circuit	Multiplexer/Demultiplexer Circuit	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division DG2517DQ-T1-E3	10-MSOP	100 mOhm	2	4 Ohm	20 ns	25 ns	1 nA	1.8 V	5.5 V	-73 dB	2 pC	10-MSOP 10-TFSOP	3 mm	0.118 in	8 pF	8 pF	Surface Mount	242 MHz	SPDT	2:1	85 °C	-40 °C
Vishay General Semiconductor - Diodes Division DG2517EDQ-T1-GE3	10-MSOP	10 mOhm	2	3.1 Ohm	33 ns	40 ns		1.8 V	5.5 V		-19.4 pC	10-MSOP 10-TFSOP	3 mm	0.118 in			Surface Mount	221 MHz	SPDT	2:1	85 °C	-40 °C
Vishay General Semiconductor - Diodes Division DG2517DN-T1-E4	10-DFN (3x3)	100 mOhm	2	4 Ohm	20 ns	25 ns	1 nA	1.8 V	5.5 V	-73 dB	2 pC	10-VFDFN Exposed Pad			8 pF	8 pF	Surface Mount	242 MHz	SPDT	2:1	85 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2 Circuit IC Switch 2:1 4Ohm 10-DFN (3x3)

Technical documentation and resources