MT3S16U(TE85L,F)

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Toshiba Semiconductor and Storage

RF TRANS NPN 5V 4GHZ USM

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Toshiba Semiconductor and Storage

RF TRANS NPN 5V 4GHZ USM

Technical Specifications

Parameters and characteristics for this part

Specification	MT3S16U(TE85L,F)

Current - Collector (Ic) (Max)	60 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Gain	4.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	2.4 dB
Operating Temperature	125 ¯C
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Supplier Device Package	SC-70
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5 V

Part	Noise Figure (dB Typ @ f)	Gain	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max)	Supplier Device Package	Power - Max [Max]
Toshiba Semiconductor and Storage MT3S16U(TE85L,F)	2.4 dB	4.5 dBi	Surface Mount	5 V	125 ¯C	NPN	SC-70 SOT-323	80	60 mA	SC-70	100 mW

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General part information

RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount SC-70

Technical documentation and resources