IXFH15N80Q

IXYS

MOSFET N-CH 800V 15A TO247AD

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IXYS

MOSFET N-CH 800V 15A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH15N80Q

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	4300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFH15N100Q	N-Channel	Through Hole	1000 V	-55 °C	150 °C	5 V	360 W	TO-247AD (IXFH)	4500 pF	170 nC	15 A	TO-247-3	20 V	10 V	700 mOhm	MOSFET (Metal Oxide)
IXYS IXFH15N60	N-Channel	Through Hole	600 V	-55 °C	150 °C	4.5 V		TO-247AD (IXFH)	4500 pF	170 nC	15 A	TO-247-3	20 V	10 V	500 mOhm	MOSFET (Metal Oxide)	300 W
IXYS IXFH15N80Q	N-Channel	Through Hole	800 V	-55 °C	150 °C	4.5 V		TO-247AD (IXFH)	4300 pF		15 A	TO-247-3	20 V	10 V	600 mOhm	MOSFET (Metal Oxide)	300 W	90 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 11.38

General part information

N-Channel 800 V 15A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

No documents available