DG2525DN-T1-GE4

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Vishay General Semiconductor - Diodes Division

IC SW DPDTX2 500MOHM 16MINIQFN

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Vishay General Semiconductor - Diodes Division

IC SW DPDTX2 500MOHM 16MINIQFN

Technical Specifications

Parameters and characteristics for this part

Specification	DG2525DN-T1-GE4

-3db Bandwidth	310 MHz
Channel-to-Channel Matching (ΔRon)	50 mOhm
Charge Injection	-19 pC
Crosstalk	-61 dB
Current - Leakage (IS(off)) (Max)	1 nA
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	2:2
Number of Circuits	2
On-State Resistance (Max) [Max]	500 mOhm
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	16-UFQFN
Supplier Device Package	16-miniQFN (1.8x2.6)
Switch Circuit	DPDT
Switch Time (Ton, Toff) (Max) [custom]	1 µs
Switch Time (Ton, Toff) (Max) [custom]	60 µs
Voltage - Supply, Single (V+) [Max]	5.5 V
Voltage - Supply, Single (V+) [Min]	1.8 V

Part	Crosstalk	Channel-to-Channel Matching (ΔRon)	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	Supplier Device Package	Mounting Type	Voltage - Supply, Single (V+) [Min]	Voltage - Supply, Single (V+) [Max]	Number of Circuits	Multiplexer/Demultiplexer Circuit	Operating Temperature [Max]	Operating Temperature [Min]	-3db Bandwidth	Charge Injection	On-State Resistance (Max) [Max]	Current - Leakage (IS(off)) (Max)	Package / Case	Switch Circuit
Vishay General Semiconductor - Diodes Division DG2525DN-T1-GE4	-61 dB	50 mOhm	1 µs	60 µs	16-miniQFN (1.8x2.6)	Surface Mount	1.8 V	5.5 V	2	2:2	85 °C	-40 °C	310 MHz	-19 pC	500 mOhm	1 nA	16-UFQFN	DPDT

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

2 Circuit IC Switch 2:2 500mOhm 16-miniQFN (1.8x2.6)

Technical documentation and resources