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Description

General part information

JANTX2N6989-Quad-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching, 2N6989 and 2N6990 Unitized transistors in a four independent 2N2222A transistor chip array. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/559. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N6989
Current - Collector (Ic) (Max)800 mA
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)100
GradeMilitary
Mounting TypeThrough Hole
NPN Count4
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package Length0.3 in
Package NameTO-116, 14-DIP
Package Width7.62 mm
Power - Max1.5 W
Qualification559, MIL-PRF-19500
Transistor ConfigurationQuad
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)50 V

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