IXFH20N60

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IXYS

MOSFET N-CH 600V 20A TO-247AD

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IXYS

MOSFET N-CH 600V 20A TO-247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH20N60

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)
IXYS IXFH20N60	20 V	Through Hole	10 V	MOSFET (Metal Oxide)	4500 pF	4.5 V	170 nC	-55 °C	150 °C	350 mOhm	TO-247-3	20 A	300 W	TO-247AD (IXFH)	N-Channel	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 20A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources