
DG2012DL-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
IC SWITCH SPDT X 1 1.8OHM SC70-6
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DG2012DL-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
IC SWITCH SPDT X 1 1.8OHM SC70-6
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DG2012DL-T1-GE3 |
|---|---|
| Channel Capacitance (CS(off), CD(off)) [custom] | 20 pF |
| Channel Capacitance (CS(off), CD(off)) [custom] | 20 pF |
| Channel-to-Channel Matching (ΔRon) | 250 mOhm |
| Charge Injection | 20 pC |
| Crosstalk | -64 dB |
| Current - Leakage (IS(off)) (Max) | 500 pA |
| Mounting Type | Surface Mount |
| Multiplexer/Demultiplexer Circuit | 2:1 |
| Number of Circuits | 1 |
| On-State Resistance (Max) [Max] | 1.8 Ohms |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
| Switch Circuit | SPDT |
| Switch Time (Ton, Toff) (Max) [custom] | 32 ns |
| Switch Time (Ton, Toff) (Max) [custom] | 38 ns |
| Voltage - Supply, Single (V+) [Max] | 5.5 V |
| Voltage - Supply, Single (V+) [Min] | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DG2012 Series
1 Circuit IC Switch 2:1 1.8Ohm SC-70-6
Documents
Technical documentation and resources
No documents available