SIGC156T60NR2CX7SA1

Obsolete

Infineon Technologies

IGBT 3 CHIP 600V WAFER

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT 3 CHIP 600V WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	SIGC156T60NR2CX7SA1

Current - Collector (Ic) (Max) [Max]	200 A
Current - Collector Pulsed (Icm)	600 A
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Supplier Device Package	Die
Td (on/off) @ 25°C	285 ns
Td (on/off) @ 25°C	180 ns
Test Condition	200 A, 300 V, 15 V, 1.5 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	IGBT Type	Mounting Type
Infineon Technologies SIGC156T60NR2CX1SA2	1.5 Ohm 15 V 200 A 300 V	285 ns	180 ns	600 A	2.5 V	Die	600 V	-55 °C	150 °C	Die	200 A	NPT	Surface Mount
Infineon Technologies SIGC156T60NR2CX1SA4	1.5 Ohm 15 V 200 A 300 V	285 ns	180 ns	600 A	2.5 V	Die	600 V	-55 °C	150 °C	Die	200 A	NPT	Surface Mount
Infineon Technologies SIGC156T60NR2CX7SA1	1.5 Ohm 15 V 200 A 300 V	285 ns	180 ns	600 A	2.5 V	Die	600 V	-55 °C	150 °C	Die	200 A	NPT	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 200 A Surface Mount Die

Technical documentation and resources