IPF13N03LA G

Obsolete

Infineon Technologies

MOSFET N-CH 25V 30A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 30A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPF13N03LA G

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1043 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	46 W
Rds On (Max) @ Id, Vgs	12.8 mOhm
Supplier Device Package	PG-TO252-3-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPF13N03LA G	30 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-23	1043 pF	MOSFET (Metal Oxide)	Surface Mount	12.8 mOhm	4.5 V 10 V	25 V	2 V	N-Channel	-55 °C	175 ░C	20 V	46 W	8.3 nC

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General part information

N-Channel 25 V 30A (Tc) 46W (Tc) Surface Mount PG-TO252-3-23

Technical documentation and resources