VN2406L-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 6.0 OHM
Deep-Dive with AI
Search across all available documentation for this part.
VN2406L-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 6.0 OHM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VN2406L-G | VN2406 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 190 mA | 190 mA |
| Drain to Source Voltage (Vdss) | 240 V | 240 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V | 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF | 125 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 1 W | 1 W |
| Rds On (Max) @ Id, Vgs | 6 Ohm | 6 Ohm |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 1 | $ 1.22 | |
| 25 | $ 1.13 | |||
| 100 | $ 1.07 | |||
| Digikey | Bag | 1 | $ 1.85 | |
| 25 | $ 1.54 | |||
| 100 | $ 1.39 | |||
| Microchip Direct | BAG | 1 | $ 1.85 | |
| 25 | $ 1.54 | |||
| 100 | $ 1.39 | |||
| 1000 | $ 1.16 | |||
| 5000 | $ 1.09 | |||
| 10000 | $ 1.00 | |||
VN2406 Series
MOSFET, N-Channel Enhancement-Mode, 240V, 6.0 Ohm
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Supplier Device Package | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VN2406L-G | 125 pF | 190 mA | -55 °C | 150 °C | MOSFET (Metal Oxide) | TO-92-3 | 20 V | 10 V | 2.5 V | 2 V | 6 Ohm | 1 W | 240 V | TO-226-3, TO-92-3 | Through Hole | N-Channel |
Microchip Technology VN2406L-G | ||||||||||||||||
Microchip Technology VN2406L-G |
Description
General part information
VN2406 Series
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.