GHXS050A060S-D3

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DIODE MODULES SIC SBD PARALLEL POWER MODULE 600V 50A

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DIODE MODULES SIC SBD PARALLEL POWER MODULE 600V 50A

Description

General part information

Diode Array 2 Independent 600 V 50A Chassis Mount SOT-227-4, miniBLOC

Parameters and characteristics for this part

Specification	GHXS050A060S-D3

Current - Average Rectified (Io) (per Diode)	50 A
Current - Reverse Leakage	100 µA
Diode Configuration	Independent
Diode Count	2
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max)	1.8 V

Part	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Reverse Leakage	Diode Count	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max)	Package / Case	Technology	Mounting Type	Package Name	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Speed - Fast Recovery (Maximum)
SemiQ GHXS050A170S-D3	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C	750 µA	2	Independent	150 A	1.9 V	miniBLOC SOT-227-4	SiC (Silicon Carbide) Schottky	Chassis Mount	SOT-227	1700 V
SemiQ GHXS050B065S-D3	500 mA	No Recovery Time	500 mA 500 mA	175 °C	-55 °C	125 µA	2	Independent	95 A	1.6 V	miniBLOC SOT-227-4	SiC (Silicon Carbide) Schottky	Chassis Mount	SOT-227	650 V	0 ns
SemiQ GHXS050A060S-D3	200 mA			175 °C	-55 °C	100 µA	2	Independent	50 A	1.8 V	miniBLOC SOT-227-4	SiC (Silicon Carbide) Schottky	Chassis Mount	SOT-227	600 V		500 ns

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