IRF7404TRPBF

Obsolete

Infineon Technologies

MOSFET P-CH 20V 6.7A 8SO

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Obsolete

Infineon Technologies

MOSFET P-CH 20V 6.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7404TRPBF

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	700 mV

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology
Infineon Technologies IRF7404TRPBF	Surface Mount	4.5 V	2.7 V	8-SOIC	3.9 mm	0.154 in	12 V	-55 °C	150 °C	1500 pF	700 mV	40 mOhm	P-Channel	6.7 A	8-SO	20 V	50 nC	2.5 W	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$