AOT380A60CL

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT380A60CL

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	955 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	131 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [x]	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AOT380A60CL	955 pF	20 V	N-Channel	3.8 V	TO-220-3	11 A	20 nC	600 V	Through Hole	MOSFET (Metal Oxide)	10 V	131 W	TO-220	-55 °C	150 °C	380 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 11A (Tc) 131W (Tc) Through Hole TO-220

Technical documentation and resources