BUJ106A,127

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WeEn Semiconductors

TRANS NPN 400V 10A TO-220AB

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Active

WeEn Semiconductors

TRANS NPN 400V 10A TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	BUJ106A,127

Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	14
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	400 V

TRANS NPN 400V 10A TO-220AB

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Supplier Device Package	Power - Max [Max]	Package / Case	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)
WeEn Semiconductors BUJ106A,127	14	100 µA	1 V	NPN	Through Hole	TO-220AB	80 W	TO-220-3	150 °C	400 V

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General part information

Bipolar (BJT) Transistor NPN 400 V 10 A 80 W Through Hole TO-220AB

Technical documentation and resources

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