AOTF095A60L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 38A TO220F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 38A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF095A60L

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	41 W
Rds On (Max) @ Id, Vgs [Max]	95 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Alpha & Omega Semiconductor Inc. AOTF095A60L	95 mOhm	N-Channel	78 nC	Through Hole	10 V	38 A	TO-220-3 Full Pack	3 V	MOSFET (Metal Oxide)	41 W	20 V	600 V	TO-220F	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 38A (Tj) 41W (Tc) Through Hole TO-220F

Technical documentation and resources