TSM070NA04LCR RLG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 40V 91A 8PDFN

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 40V 91A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM070NA04LCR RLG

Current - Continuous Drain (Id) @ 25°C	91 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1469 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max) [Max]	113 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	5.2
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]
Taiwan Semiconductor Corporation TSM070NA04LCR RLG	N-Channel	91 A	8-PowerLDFN	20 V	7 mOhm	Surface Mount	-55 °C	150 °C	2.5 V	1469 pF	113 W	4.5 V 10 V	40 V	MOSFET (Metal Oxide)	23.5 nC	8-PDFN	5.75	5.2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 91A (Tc) 113W (Tc) Surface Mount 8-PDFN (5.2x5.75)

Technical documentation and resources

No documents available