Specification	PHT6N06LT,135

Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	4.5 nC
Input Capacitance (Ciss) (Max)	330 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SC-73
Power Dissipation (Max)	8.3 W, 1.8 W
Rds On (Max)	150 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	13 V
Vgs(th) (Max)	2 V

PHT6 Series

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package Name	Package / Case	Gate Charge (Max)	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Technology	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)
NXP USA Inc. PHT6N06T,135	20 V	10 V	55 V	SC-73	TO-261-4 TO-261AA	5.6 nC	Surface Mount	150 mOhm	4 V	-55 °C	150 °C	175 pF	MOSFET (Metal Oxide)	8.3 W	N-Channel	5.5 A
NXP USA Inc. PHT6N06LT,135	13 V	5 V	55 V	SC-73	TO-261-4 TO-261AA	4.5 nC	Surface Mount	150 mOhm	2 V	-55 °C	150 °C	330 pF	MOSFET (Metal Oxide)	1.8 W 8.3 W	N-Channel		2.5 A

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