IGOT60R070D1AUMA1

Obsolete

Infineon Technologies

GANFET N-CH 600V 31A 20DSO

Search across all available documentation for this part.

Obsolete

Infineon Technologies

GANFET N-CH 600V 31A 20DSO

Technical Specifications

Parameters and characteristics for this part

Specification	IGOT60R070D1AUMA1

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	20-PowerSOIC
Package / Case [custom]	11 mm
Package / Case [custom]	0.433 in
Power Dissipation (Max)	125 W
Supplier Device Package	PG-DSO-20-87
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	-10 V
Vgs(th) (Max) @ Id	1.6 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Package / Case [custom]	Package / Case [custom]	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IGOT60R070D1AUMA1	380 pF	600 V	Surface Mount	125 W	11 mm	0.433 in	20-PowerSOIC	N-Channel	-55 °C	150 °C	1.6 V	PG-DSO-20-87	GaNFET (Gallium Nitride)	-10 V	31 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-87

Technical documentation and resources