2SC4881(CANO,F,M)

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 50V 5A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 50V 5A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4881(CANO,F,M)

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case
Toshiba Semiconductor and Storage 2SC4881(CANO,F,M)	100 MHz	400 mV	NPN	2 W	1 µA	Through Hole	100	150 °C	5 A	50 V	TO-220NIS	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 50 V 5 A 100MHz 2 W Through Hole TO-220NIS

Technical documentation and resources