SUM40N10-30-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 40A TO263

Search across all available documentation for this part.

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 40A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM40N10-30-E3

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	107 W, 3.75 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Supplier Device Package	Package / Case
Vishay General Semiconductor - Diodes Division SUM40N10-30-E3	N-Channel	-55 °C	175 ░C	20 V	2400 pF	60 nC	6 V 10 V	30 mOhm	3.75 W 107 W	100 V	4 V	MOSFET (Metal Oxide)	Surface Mount	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 40A (Tc) 3.75W (Ta), 107W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available