IXFE39N90

Obsolete

IXYS

MOSFET N-CH 900V 34A SOT227B

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Obsolete

IXYS

MOSFET N-CH 900V 34A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFE39N90

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	375 nC
Input Capacitance (Ciss) (Max) @ Vds	13400 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	580 W
Rds On (Max) @ Id, Vgs	220 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package
IXYS IXFE39N90	N-Channel	580 W	150 °C	-40 °C	5 V	20 V	10 V	34 A	13400 pF	900 V	375 nC	Chassis Mount	MOSFET (Metal Oxide)	SOT-227-4 miniBLOC	220 mOhm	SOT-227B

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 34A (Tc) 580W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available