CAS325M12HM2
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MOSFET 2N-CH 1200V 444A MODULE
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CAS325M12HM2
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MOSFET 2N-CH 1200V 444A MODULE
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Technical Specifications
Parameters and characteristics for this part
| Specification | CAS325M12HM2 | 
|---|---|
| Configuration | 2 N-Channel (Half Bridge) | 
| Current - Continuous Drain (Id) @ 25°C | 444 A | 
| Drain to Source Voltage (Vdss) | 1200 V | 
| Drain to Source Voltage (Vdss) | 1.2 kV | 
| Gate Charge (Qg) (Max) @ Vgs | 1127 nC | 
| Input Capacitance (Ciss) (Max) @ Vds | 19500 pF | 
| Operating Temperature | 175 °C | 
| Package / Case | Module | 
| Power - Max [Max] | 3 kW | 
| Rds On (Max) @ Id, Vgs | 4.3 mOhm | 
| Supplier Device Package | Module | 
| Technology | Silicon Carbide (SiC) | 
| Vgs(th) (Max) @ Id | 4 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
CAS325 Series
Mosfet Array 1200V (1.2kV) 444A (Tc) 3000W Module
Documents
Technical documentation and resources
No documents available