TSM043NH04LCR RLG

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Taiwan Semiconductor Corporation

40V, 54A, SINGLE N-CHANNEL POWER

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Taiwan Semiconductor Corporation

40V, 54A, SINGLE N-CHANNEL POWER

Technical Specifications

Parameters and characteristics for this part

Specification	TSM043NH04LCR RLG

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2480 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]
Taiwan Semiconductor Corporation TSM043NH04CR RLG	100 W	-55 °C	175 ░C	8-PowerTDFN	40 V	4.3 mOhm	8-PDFNU (5x6)	Surface Mount Wettable Flank	MOSFET (Metal Oxide)	2531 pF	3.6 V	20 V	N-Channel
Taiwan Semiconductor Corporation TSM043NH04LCR RLG	100 W	-55 °C	175 ░C	8-PowerTDFN	40 V	4.3 mOhm	8-PDFNU (5x6)	Surface Mount Wettable Flank	MOSFET (Metal Oxide)	2480 pF		16 V	N-Channel	4.5 V 10 V	42 nC	2.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 20A (Ta), 54A (Tc) 100W (Tc) Surface Mount, Wettable Flank 8-PDFNU (5x6)

Technical documentation and resources