JAN1N3646

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Microchip Technology

DIODE GP 1.75KV 250MA S AXIAL

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Microchip Technology

DIODE GP 1.75KV 250MA S AXIAL

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	JAN1N3646	1N3646 Series

	-	-
Current - Average Rectified (Io)	250 mA	250 mA
Current - Reverse Leakage @ Vr	5 µA	5 - 100 µA
Grade	Military	Military
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	S, Axial	S, Axial
Qualification	MIL-PRF-19500/279	MIL-PRF-19500/279
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	S, Axial	S, Axial
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1750 V	1750 V
Voltage - Forward (Vf) (Max) @ If	5 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 14.10

DIODE GP 1.75KV 250MA S AXIAL

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Qualification	Supplier Device Package	Speed	Speed
Microchip Technology JAN1N3646	1750 V	Military	5 µA	250 mA	Axial, S	175 ░C	-65 C	Standard	5 V	Through Hole	MIL-PRF-19500/279	S, Axial	Standard Recovery >500ns	200 mA
Microchip Technology 1N3646
Microchip Technology 1N3646	1750 V		100 µA	250 mA	Axial, S	175 ░C	-65 C	Standard	5 V	Through Hole		S, Axial	Standard Recovery >500ns	200 mA

General part information

Diode 1750 V 250mA Through Hole S, Axial

Technical documentation and resources