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STPSC15H12G2-TR - TN4050HP-12G2YTR

STPSC15H12G2-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 15 A, 94 NC, D2PAK-HV

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STPSC15H12G2-TR - TN4050HP-12G2YTR

STPSC15H12G2-TR

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 15 A, 94 NC, D2PAK-HV

Deep-Dive with AI

Documents+13

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.18
10$ 6.16
100$ 5.13
500$ 4.53
Digi-Reel® 1$ 7.18
10$ 6.16
100$ 5.13
500$ 4.53
Tape & Reel (TR) 1000$ 4.07
2000$ 3.82
NewarkEach (Supplied on Cut Tape) 1$ 9.30
10$ 7.34
25$ 6.92
50$ 6.51
100$ 6.12
250$ 6.08
500$ 5.86
1000$ 5.85

Description

General part information

STPSC15H12G2-TR Series

This 15 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

The STPSC15H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.