1N4004AT-82

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Rohm Semiconductor

DIODE GEN PURP 400V 1A DO41

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Rohm Semiconductor

DIODE GEN PURP 400V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4004AT-82

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-204AL, DO-41, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP 400V 1A DO41

Part	Supplier Device Package	Mounting Type	Technology	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor 1N4004AT-82	DO-41	Through Hole	Standard	1.1 V	Standard Recovery >500ns	200 mA	1 A	10 µA	175 °C	Axial, DO-204AL, DO-41	400 V

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General part information

Diode 400 V 1A Through Hole DO-41

Technical documentation and resources

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