AOU2N60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO251-3

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	AOU2N60

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	56.8 W
Rds On (Max) @ Id, Vgs	4.4 Ohm
Supplier Device Package	TO-251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id
Alpha & Omega Semiconductor Inc. AOU2N60	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	10 V	2 A	56.8 W	325 pF	150 °C	-50 °C	11 nC	600 V	MOSFET (Metal Oxide)	TO-251-3	N-Channel	4.4 Ohm	30 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	4000	$ 0.25