IRFP250

Obsolete

IXYS

MOSFET N-CH 200V 30A TO247AD

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Obsolete

IXYS

MOSFET N-CH 200V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP250

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2970 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	TO-247AD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	Mounting Type	Technology	Package / Case
IXYS IRFP250	2970 pF	30 A	4 V	85 mOhm	200 V	10 V	20 V	140 nC	N-Channel	-55 °C	150 °C	TO-247AD	190 W	Through Hole	MOSFET (Metal Oxide)	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 30A (Tc) 190W (Tc) Through Hole TO-247AD

Technical documentation and resources