SMBT3906SE6327

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Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

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Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	SMBT3906SE6327

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	330 W
Supplier Device Package	SOT-363
Transistor Type	2 PNP Darlington (Dual)
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Power - Max [Max]	Operating Temperature	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Infineon Technologies SMBT3906SE6327	400 mV	Surface Mount	100	SOT-363	6-VSSOP SC-88 SOT-363	330 W	150 °C	250 MHz	40 V	2 PNP Darlington (Dual)	50 nA	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	10377	$ 0.03

General part information

Bipolar (BJT) Transistor Array 2 PNP Darlington (Dual) 40V 200mA 250MHz 330W Surface Mount SOT-363

Technical documentation and resources

No documents available