IXTH130N15T

Obsolete

IXYS

MOSFET N-CH 150V 130A TO247

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Obsolete

IXYS

MOSFET N-CH 150V 130A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH130N15T

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	113 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	750 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type
IXYS IXTH130N15T	30 V	130 A	4.5 V	Through Hole	-55 °C	175 ░C	MOSFET (Metal Oxide)	113 nC	750 W	150 V	12 mOhm	9800 pF	TO-247 (IXTH)	TO-247-3	10 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 130A (Tc) 750W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available