IXFR180N10

IXYS

MOSFET N-CH 100V 165A ISOPLUS247

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IXYS

MOSFET N-CH 100V 165A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR180N10

Current - Continuous Drain (Id) @ 25°C	165 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	400 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
IXYS IXFR180N06	TO-247-3	N-Channel	180 A	560 W	ISOPLUS247™	5 mOhm	10 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	420 nC	60 V	Through Hole	7650 pF	4 V
IXYS IXFR180N10	TO-247-3	N-Channel	165 A	400 W	ISOPLUS247™	8 mOhm	10 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	400 nC	100 V	Through Hole	9400 pF	4 V
IXYS IXFR180N07	TO-247-3	N-Channel	180 A	417 W	ISOPLUS247™	6 mOhm	10 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	420 nC	70 V	Through Hole	9400 pF	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 15.13

General part information

N-Channel 100 V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available