BM63373S-VC
ActiveRohm Semiconductor
INTELLIGENT POWER MODULE (IPM), IGBT, 600 V, 10 A, 1.5 KV, DIPIPM
BM63373S-VC
ActiveRohm Semiconductor
INTELLIGENT POWER MODULE (IPM), IGBT, 600 V, 10 A, 1.5 KV, DIPIPM
Description
General part information
BM63373 Series
BM63373S-VA/-VC is an Intelligent Power Module composed of gate drivers, bootstrap diodes, IGBTs, fly wheel diodes.
Technical Specifications
Parameters and characteristics for this part
| Specification | BM63373S-VC |
|---|---|
| Channel Count | 3 |
| Configuration | Phase Inverter |
| Current | 10 A |
| Mounting Type | Through Hole |
| Package Length | 1.327 in |
| Package Name | 25-PowerDIP Module |
| Package Width | 33.7 mm |
| Type | IGBT |
| Voltage | 600 V |
| Voltage - Isolation | 1500 Vrns |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Notes for Temperature Measurement Using Thermocouples
What Is Thermal Design
Importance of Probe Calibration When Measuring Power: Deskew
About Export Administration Regulations (EAR)
4 Steps for Successful Thermal Designing of Power Devices
Judgment Criteria of Thermal Evaluation
θ<sub>JC</sub> and Ψ<sub>JT</sub>
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Method for Monitoring Switching Waveform
About Flammability of Materials
Basics of Thermal Resistance and Heat Dissipation
Impedance Characteristics of Bypass Capacitor
Notes for Temperature Measurement Using Forward Voltage of PN Junction
PCB Layout Thermal Design Guide
Precautions for Thermal Resistance of Insulation Sheet
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Notes for Calculating Power Consumption:Static Operation
Compliance of the ELV directive
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
Anti-Whisker formation
600V IGBT Gen.3 Intelligent Power Module (IPM) BM6337*S, BM6357*S Series Application Note
Method for Calculating Junction Temperature from Transient Thermal Resistance Data