TSM16ND50CI

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Taiwan Semiconductor Corporation

500V, 16A, SINGLE N-CHANNEL POW

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Taiwan Semiconductor Corporation

500V, 16A, SINGLE N-CHANNEL POW

Technical Specifications

Parameters and characteristics for this part

Specification	TSM16ND50CI

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2551 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	59.5 W
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	ITO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type
Taiwan Semiconductor Corporation TSM16ND50CI	53 nC	Through Hole	59.5 W	-55 °C	150 °C	ITO-220	10 V	2551 pF	500 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab	350 mOhm	16 A	4.5 V	30 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	4000	$ 2.81

General part information

N-Channel 500 V 16A (Tc) 59.5W (Tc) Through Hole ITO-220

Technical documentation and resources

No documents available