IR2107

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8DIP

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Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IR2107

Channel Type	Independent
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	2.7 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Mounting Type	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Logic Voltage - VIL, VIH	Supplier Device Package	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Package / Case	Package / Case	Driven Configuration	Number of Drivers
Infineon Technologies IR2107	Through Hole	Inverting	20 V	10 VDC	Independent	0.8 V 2.7 V	8-PDIP	IGBT N-Channel MOSFET	150 °C	-40 °C	150 ns	50 ns	600 V	0.3 in	8-DIP	7.62 mm	Half-Bridge	2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Inverting 8-PDIP

Technical documentation and resources