IPS60R400CEAKMA1

Obsolete

Infineon Technologies

CONSUMER

Search across all available documentation for this part.

Obsolete

Infineon Technologies

CONSUMER

Technical Specifications

Parameters and characteristics for this part

Specification	IPS60R400CEAKMA1

Current - Continuous Drain (Id) @ 25°C	14.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	112 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPS60R400CEAKMA1	150 °C	-40 °C	32 nC	3.5 V	700 pF	400 mOhm	IPAK TO-251-3 Short Leads TO-251AA	14.7 A	Through Hole	600 V	MOSFET (Metal Oxide)	PG-TO251-3	112 W	20 V	N-Channel	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 14.7A (Tj) 112W (Tc) Through Hole PG-TO251-3

Technical documentation and resources

No documents available