MMIX1F132N50P3

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IXYS

MOSFET N-CH 500V 63A 24SMPD

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IXYS

MOSFET N-CH 500V 63A 24SMPD

Technical Specifications

Parameters and characteristics for this part

Specification	MMIX1F132N50P3

Current - Continuous Drain (Id) @ 25°C	63 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	18600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	24-PowerSMD, 21 Leads
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	24-SMPD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
IXYS MMIX1F132N50P3	30 V	-55 °C	150 °C	43 mOhm	5 V	18600 pF	500 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	10 V	24-PowerSMD 21 Leads	520 W	24-SMPD	63 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 34.56

General part information

N-Channel 500 V 63A (Tc) 520W (Tc) Surface Mount 24-SMPD

Technical documentation and resources

No documents available