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TK2R4A08QM,S4X

TK2R4A08QM,S4X

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Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.00244 Ω@10V, TO-220SIS, U-MOSⅩ-H

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TK2R4A08QM,S4X

TK2R4A08QM,S4X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.00244 Ω@10V, TO-220SIS, U-MOSⅩ-H

Find alt

Description

General part information

TK2R4A08QM Series

12V - 300V MOSFETs, N-ch MOSFET, 80 V, 0.00244 Ω@10V, TO-220SIS, U-MOSⅩ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK2R4A08QM,S4X
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)179 nC
Input Capacitance (Ciss) (Max)13000 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)47 W
Rds On (Max)2.44 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Maximum Ratings: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Simplified CFD Model Application Note
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET Self-Turn-On Phenomenon
Avalanche energy calculation
Derating of the MOSFET Safe Operating Area
Structures and Characteristics: Power MOSFET Application Notes
MOSFET SPICE model grade
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
TK2R4A08QM Data sheet/Japanese
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
TK2R4A08QM Data sheet/English
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Selection Guide MOSFETs 2025 Rev1.0