IPF09N03LA

Obsolete

Infineon Technologies

MOSFET N-CH 25V 50A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 50A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPF09N03LA

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	1642 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	8.6 mOhm
Supplier Device Package	PG-TO252-3-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPF09N03LA G	13 nC	20 V	2 V	PG-TO252-3-23	63 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	4.5 V 10 V	Surface Mount	50 A	8.6 mOhm	25 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	1642 pF
Infineon Technologies IPF09N03LA	13 nC	20 V	2 V	PG-TO252-3-23	63 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	4.5 V 10 V	Surface Mount	50 A	8.6 mOhm	25 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	1642 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 50A (Tc) 63W (Tc) Surface Mount PG-TO252-3-23

Technical documentation and resources