Specification	SI6469DQ-T1-E3

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	40 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Power Dissipation (Max)	1.5 W
Rds On (Max)	28 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	450 mV

SI6469 Series

Part	Package Length	Package Name	Package Width	FET Type	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Vgs(th) (Max)	Mounting Type	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Power Dissipation (Max)
Vishay Dale SI6469DQ-T1-GE3	0.173 in	8-TSSOP	4.4 mm	P-Channel	6 A	40 nC	450 mV	Surface Mount	MOSFET (Metal Oxide)	4.5 V	1.8 V	28 mOhm	8 V	-55 °C	150 °C	8 V	1.5 W
Vishay Dale SI6469DQ-T1-E3	0.173 in	8-TSSOP	4.4 mm	P-Channel	6 A	40 nC	450 mV	Surface Mount	MOSFET (Metal Oxide)	4.5 V	1.8 V	28 mOhm	8 V	-55 °C	150 °C	8 V	1.5 W

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