STPSC8H065G2Y-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 23.5 NC, D2PAK HV, 3 PINS
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STPSC8H065G2Y-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 23.5 NC, D2PAK HV, 3 PINS
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC8H065G2Y-TR | STPSC8 Series |
|---|---|---|
| Capacitance @ Vr, F | 414 pF | 414 pF |
| Current - Average Rectified (Io) | 8 A | 8 A |
| Current - Average Rectified (Io) (per Diode) | - | 4 A |
| Current - Reverse Leakage @ Vr | 80 µA | 40 - 80 µA |
| Diode Configuration | - | 1 Pair Common Cathode |
| Grade | Automotive | Automotive |
| Mounting Type | Surface Mount | Surface Mount, Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 | SC-63, DPAK (2 Leads + Tab), TO-252-3, TO-220-2, TO-220-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Qualification | AEC-Q101 | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Supplier Device Package | D2PAK HV | DPAK, TO-220AC, TO-220, D2PAK HV |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V | 1.65 - 1.75 V |
STPSC8 Series
650 V, 8 A High surge Silicon Carbide Power Schottky Diode
| Part | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Mounting Type | Capacitance @ Vr, F | Speed | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Package / Case | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC8H065B-TR | DPAK | 650 V | 0 ns | Surface Mount | 414 pF | No Recovery Time | 80 µA | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 8 A | 1.75 V | ||||
STMicroelectronics STPSC8H065D | TO-220AC | 650 V | 0 ns | Through Hole | 414 pF | No Recovery Time | 80 µA | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | TO-220-2 | 8 A | 1.75 V | ||||
STMicroelectronics STPSC8H065CT | TO-220 | 650 V | 0 ns | Through Hole | No Recovery Time | 40 µA | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | TO-220-3 | 1.75 V | 4 A | 1 Pair Common Cathode | ||||
STMicroelectronics STPSC8H065G2Y-TR | D2PAK HV | 650 V | 0 ns | Surface Mount | 414 pF | No Recovery Time | 80 µA | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 8 A | 1.65 V | AEC-Q101 | Automotive |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC8 Series
This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
This STPSC8H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.