STPSC8H065G2Y-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 23.5 NC, D2PAK HV, 3 PINS

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STPSC8H065G2Y-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 23.5 NC, D2PAK HV, 3 PINS

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Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.05
		10	$ 2.56
		100	$ 2.07
		500	$ 1.84
	Digi-Reel®	1	$ 3.05
		10	$ 2.56
		100	$ 2.07
		500	$ 1.84
	Tape & Reel (TR)	1000	$ 1.58
		2000	$ 1.48
		5000	$ 1.42
Newark	Each (Supplied on Cut Tape)	1	$ 4.87
		10	$ 3.60
		25	$ 3.33
		50	$ 3.07
		100	$ 2.80
		250	$ 2.78
		500	$ 2.39
		1000	$ 2.27

Description

General part information

STPSC8 Series

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

This STPSC8H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Documents

Technical documentation and resources

Conference Papers

Flyers

Specification	STPSC8H065G2Y-TR	STPSC8 Series

Capacitance @ Vr, F	414 pF	414 pF
Current - Average Rectified (Io)	8 A	8 A
Current - Average Rectified (Io) (per Diode)	-	4 A
Current - Reverse Leakage @ Vr	80 µA	40 - 80 µA
Diode Configuration	-	1 Pair Common Cathode
Grade	Automotive	Automotive
Mounting Type	Surface Mount	Surface Mount, Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-40 °C	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3	SC-63, DPAK (2 Leads + Tab), TO-252-3, TO-220-2, TO-220-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101	AEC-Q101
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	D2PAK HV	DPAK, TO-220AC, TO-220, D2PAK HV
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If	1.65 V	1.65 - 1.75 V

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Capacitance @ Vr, F	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Package / Case	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Qualification	Grade
STMicroelectronics STPSC8H065B-TR	DPAK	650 V	Surface Mount	414 pF	No Recovery Time	80 µA	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky	DPAK (2 Leads + Tab), SC-63, TO-252-3	8 A	1.75 V
STMicroelectronics STPSC8H065D	TO-220AC	650 V	Through Hole	414 pF	No Recovery Time	80 µA	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky	TO-220-2	8 A	1.75 V
STMicroelectronics STPSC8H065CT	TO-220	650 V	Through Hole		No Recovery Time	40 µA	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky	TO-220-3		1.75 V	4 A	1 Pair Common Cathode
STMicroelectronics STPSC8H065G2Y-TR	D2PAK HV	650 V	Surface Mount	414 pF	No Recovery Time	80 µA	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	8 A	1.65 V			AEC-Q101	Automotive

STPSC8H065G2Y-TR

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STPSC8H065G2Y-TR

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Pricing

Description

STPSC8 Series

Documents

AN5088

DS12495

AN4242

Product Change Notice EN

Technical Data Sheet EN

Datasheet

Technical Specifications

STPSC8 Series