BYQ30E-200,127

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WeEn Semiconductors

DIODE ARRAY GP 200V 16A TO220AB

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WeEn Semiconductors

DIODE ARRAY GP 200V 16A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	BYQ30E-200,127

Current - Average Rectified (Io) (per Diode)	16 A
Current - Reverse Leakage @ Vr	30 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

DIODE ARRAY GP 200V 16A TO220AB

Part	Mounting Type	Package / Case	Operating Temperature - Junction	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors BYQ30E-200,127	Through Hole	TO-220-3	150 °C	200 mA, 500 ns	25 ns	30 µA	TO-220AB	200 V	1 Pair Common Cathode	1.25 V	Standard	16 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 200 V 16A Through Hole TO-220-3

Technical documentation and resources

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