Specification	SS1FN6HM3/H

Capacitance	90 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	800 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	DO-219AB
Package Name	DO-219AB (SMF)
Qualification	AEC-Q101
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	60 V
Voltage - Forward (Vf) (Max)	0.53 V

SS1FN6 Series

Part	Package Name	Grade	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Technology	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package / Case	Mounting Type	Qualification	Capacitance
Vishay General Semiconductor - Diodes Division SS1FN6HM3/H	DO-219AB (SMF)	Automotive	0.53 V	60 V	1 A	500 ns	200 mA	Schottky	800 µA	150 °C	-55 °C	DO-219AB	Surface Mount	AEC-Q101	90 pF
Vishay General Semiconductor - Diodes Division SS1FN6-M3/I	DO-219AB (SMF)		0.53 V	60 V	1 A	500 ns	200 mA	Schottky	800 µA	150 °C	-55 °C	DO-219AB	Surface Mount		90 pF
Vishay General Semiconductor - Diodes Division SS1FN6-M3/H	DO-219AB (SMF)		0.53 V	60 V	1 A	500 ns	200 mA	Schottky	800 µA	150 °C	-55 °C	DO-219AB	Surface Mount		90 pF

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