SUP90P06-09L-E3

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Vishay Siliconix

MOSFET P-CH 60V 90A TO220AB

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Vishay Siliconix

MOSFET P-CH 60V 90A TO220AB

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	SUP90P06-09L-E3	SUP90 Series

Current - Continuous Drain (Id) @ 25°C	90 A	90 A
Drain to Source Voltage (Vdss)	60 V	30 - 75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V	4.5 - 10 V
FET Type	P-Channel	N-Channel, P-Channel
Gate Charge (Qg) (Max) @ Vgs	-	105 - 257 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	240 nC	131 - 240 nC
Input Capacitance (Ciss) (Max) @ Vds	9200 pF	4250 - 12065 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	175 ░C	150 - 175 ░C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-220-3	TO-220-3
Power Dissipation (Max)	250 W, 2.4 W	2.4 - 300 W
Rds On (Max) @ Id, Vgs	9.3 mOhm	2.9 - 9.3 mOhm
Rds On (Max) @ Id, Vgs	-	6.8 - 7.7 mOhm
Supplier Device Package	TO-220AB	TO-220AB
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	3 V	2.5 - 4.5 V

MOSFET N-CH 60V 90A TO220AB

Part	Package / Case	Mounting Type	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs
Vishay Siliconix SUP90N06-5M0P-E3	TO-220-3	Through Hole	20 V	N-Channel	6190 pF	4.5 V	160 nC	-55 °C	175 ░C	60 V	10 V	MOSFET (Metal Oxide)	TO-220AB	90 A	3.75 W, 300 W
Vishay Siliconix SUP90N08-6M8P-E3	TO-220-3	Through Hole	20 V	N-Channel	4620 pF	4.5 V		-55 °C	175 ░C	75 V	10 V	MOSFET (Metal Oxide)	TO-220AB	90 A	3.75 W, 272 W	115 nC	6.8 mOhm
Vishay Siliconix SUP90N08-7M7P-E3	TO-220-3	Through Hole	20 V	N-Channel	4250 pF	4.5 V		-55 °C	150 °C	75 V	10 V	MOSFET (Metal Oxide)	TO-220AB	90 A	3.75 W, 208.3 W	105 nC	7.7 mOhm
Vishay Siliconix SUP90P06-09L-E3	TO-220-3	Through Hole	20 V	P-Channel	9200 pF	3 V	240 nC	-55 °C	175 ░C	60 V	4.5 V, 10 V	MOSFET (Metal Oxide)	TO-220AB	90 A	2.4 W, 250 W			9.3 mOhm
Vishay Siliconix SUP90N04-3M3P-GE3	TO-220-3	Through Hole	20 V	N-Channel	5286 pF	2.5 V	131 nC	-55 °C	150 °C	40 V	4.5 V, 10 V	MOSFET (Metal Oxide)	TO-220AB	90 A	3.1 W, 125 W			3.3 mOhm
Vishay Siliconix SUP90N03-03-E3	TO-220-3	Through Hole	20 V	N-Channel	12065 pF	2.5 V		-55 °C	175 ░C	30 V	4.5 V, 10 V	MOSFET (Metal Oxide)	TO-220AB	90 A	3.75 W, 250 W	257 nC		2.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 90A (Tc) 2.4W (Ta), 250W (Tc) Through Hole TO-220AB

Technical documentation and resources