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TK31E60X - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.088 Ω@10V, TO-220, DTMOSⅣ-H

TK5R3E08QM,S1X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0053 Ω@10V, TO-220, U-MOSⅩ-H

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TK31E60X - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.088 Ω@10V, TO-220, DTMOSⅣ-H

TK5R3E08QM,S1X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0053 Ω@10V, TO-220, U-MOSⅩ-H

Find alt

Description

General part information

TK5R3E08QM Series

12V - 300V MOSFETs, N-ch MOSFET, 80 V, 0.0053 Ω@10V, TO-220, U-MOSⅩ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK5R3E08QM,S1X
Current - Continuous Drain (Id) (Tc)120 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)55 nC
Input Capacitance (Ciss) (Max)3980 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)150 W
Rds On (Max)5.3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Structures and Characteristics: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Selection Guide MOSFETs 2025 Rev1.0
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Motor Control (Vacuum Cleaners)
Reverse Recovery Operation and Destruction of MOSFET Body Diode
TK5R3E08QM Data sheet/English
Derating of the MOSFET Safe Operating Area
Calculating the Temperature of Discrete Semiconductor Devices
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Maximum Ratings: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Simplified CFD Model Application Note
MOSFET SPICE model grade
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Avalanche energy calculation
Hints and Tips for Thermal Design part3
MOSFET Secondary Breakdown
MOSFET Self-Turn-On Phenomenon
TK5R3E08QM Data sheet/Japanese
RC Snubbers for Step-Down Converters
Electrical Characteristics: Power MOSFET Application Notes